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Monolayer ternary tellurides based on alloying different transition metal dichalcogenides (TMDs) can result in new two‐dimensional (2D) materials ranging from semiconductors to metals and superconductors with tunable optical and electrical properties. Semiconducting WTe_2xS_2(1‐x)monolayer possesses two inequivalent valleys in the Brillouin zone, each valley coupling selectively with circularly polarized light (CPL). The degree of valley polarization (DVP) under the excitation of CPL represents the purity of valley polarized photoluminescence (PL), a critical parameter for opto‐valleytronic applications. Here, new strategies to efficiently tailor the valley‐polarized PL from semiconducting monolayer WTe_2xS_2(1‐x)at room temperature (RT) through alloying and back‐gating are presented. The DVP at RT is found to increase drastically from < 5% in WS₂to 40% in WTe_0.12S_1.88by Te‐alloying to enhance the spin‐orbit coupling. Further enhancement and control of the DVP from 40% up to 75% is demonstrated by electrostatically doping the monolayer WTe_0.12S_1.88via metallic 1T′‐WTe₂electrodes, where the use of 1T′‐WTe₂substantially lowers the Schottky barrier height (SBH) and weakens the Fermi‐level pinning of the electrical contacts. The demonstration of drastically enhanced DVP and electrical tunability in the valley‐polarized emission from 1T′‐WTe₂/WTe_0.12S_1.88heterostructures paves new pathways towards harnessing valley excitons in ultrathin valleytronic devices for RT applications.

 

We report spectrally selective visible wavelength reflectors using hydrogenated amorphous silicon carbide (a-SiC:H) as a high index contrast material. Beyond 610nm and through the near infrared spectrum, a-SiC:H exhibits very low loss and exhibits an wavelength averaged index of refraction of n = 3.1. Here we design, fabricate, and characterize such visible reflectors using a hexagonal array of a-SiC:H nanopillars as wavelength-selective mirrors with a stop-band of approximately 40 nm full-width at half maximum. The fabricated high contrast grating exhibits reflectivity R >94% at a resonance wavelength of 642nm with a single layer of a-SiC:H nanopillars. The resonance wavelength is tunable by adjusting the geometrical parameters of the a-SiC:H nanopillar array, and we observe a stop-band spectral center shift from 635 nm up to 642 nm. High contrast gratings formed from a-SiC:H nanopillars are a promising platform for various visible wavelength nanophotonics applications.

 

Inorganic phototropic growth using only spatially conformal illumination generated Se–Cd films that exhibited precise light-defined mesoscale morphologies including highly ordered, anisotropic, and periodic ridge and trench nanotextures over entire macroscopic substrates. Growth was accomplished via a light-induced electrochemical method using an optically and chemically isotropic solution, an unpatterned substrate, and unstructured, incoherent, low-intensity illumination in the absence of chemical directing agents or physical templates and masks. The morphologies were defined by the illumination inputs: the nanotexture long axes aligned parallel to the optical E-field vector, and the feature sizes and periods scaled with the wavelength. Optically based modeling of the growth closely reproduced the experimental results, confirming the film morphologies were fully determined by the light–matter interactions during growth. Solution processing of the Se–Cd films resulted in stoichiometric, crystalline CdSe films that also exhibited ordered nanotextures, demonstrating that inorganic phototropic growth can effect tunable, template-free generation of ordered CdSe nanostructures over macroscopic length scales.